power transistors 1 publication date: february 2003 sjd00189bed 2sd1275, 2sd1275a silicon npn triple diffusion planar type darlington for power amplification complementary to 2sb0949 and 2sb0949a features ? high forward current transfer ratio h fe ? high-speed switching ? full-pack package which can be installed to the heat sink with one screw absolute maximum ratings t a = 25 c electrical characteristics t a = 25 c 3 c unit: mm 1: base 2: collector 3: emitter eiaj: sc-67 to-220f-a1 package parameter symbol rating unit collector-base voltage 2sd1275 v cbo 60 v (emitter open) 2sd1275a 80 collector-emitter voltage 2sd1275 v ceo 60 v (base open) 2sd1275a 80 emitter-base voltage (collector open) v ebo 5v collector current i c 2a peak collector current i cp 4a collector power t c = 25 cp c 35 w dissipation 2.0 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-emitter voltage 2sd1275 v ceo i c = 30 ma, i b = 0 6 0v (base open) 2sd1275a 80 base-emitter voltage v be v ce = 4 v, i c = 2 a 2.8 v collector-base cutoff 2sd1275 i cbo v cb = 60 v, i e = 01ma current (emitter open) 2sd1275a v cb = 80 v, i e = 01 collector-emitter cutoff 2sd1275 i ceo v ce = 30 v, i b = 02ma current (base open) 2sd1275a v ce = 40 v, i b = 02 emitter-base cutoff current (collector open) i ebo v eb = 5 v, i c = 02ma forward current transfer ratio h fe1 v ce = 4 v, i c = 1 a 1 000 ? h fe2 * v ce = 4 v, i c = 2 a 1 000 10 000 collector-emitter saturation voltage v ce(sat) i c = 2 a, i b = 8 ma 2.5 v transition frequency f t v ce = 10 v, i c = 0.5 a, f = 1 mhz 20 mhz turn-on time t on i c = 2 a, i b1 = 8 ma, i b2 = ? 8 ma, 0.5 s storage time t stg v cc = 50 v 4.0 s fall time t f 1.0 s 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip (4.0) 0.5 +0.2 ?0.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.3 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 3.1 0.1 note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification rank r q p h fe2 1 000 to 2 500 2 000 to 5 000 4 000 to 10 000 internal connection b c e this product complies with the rohs directive (eu 2002/95/ec). maintenance/ discontinued maintenance/discontinued includes following four product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type please visit following url about latest information. http://panasonic.net/sc/en
2sd1275, 2sd1275a 2 sjd00189bed v ce(sat) ? i c h fe ? i c c ob ? v cb p c ? t a i c ? v ce i c ? v be safe operation area r th ? t 0 160 40 120 80 0 10 20 30 40 50 collector power dissipation p c (w) ambient temperature t a ( c) (1)t c =ta (2)with a 100 100 2mm al heat sink (3)with a 50 50 2mm al heat sink (4)without heat sink (p c =2w) (1) (2) (3) (4) 06 15 24 3 0 1 2 3 5 4 collector current i c (a) collector-emitter voltage v ce (v) t c =25?c i b =2.0ma 0.2ma 0.4ma 0.6ma 0.8ma 1.0ma 1.2ma 1.4ma 1.6ma 1.8ma 0 2 4 6 10 8 0 3.2 0.8 2.4 1.6 base-emitter voltage v be (v) collector current i c (a) v ce =4v t c =100?c ?5?c 25?c 0.01 0.01 0.1 1 10 100 0.1 1 10 collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) i c /i b =250 100?c 25?c t c =?5?c 0.01 0.1 1 10 10 10 2 10 3 10 4 10 5 forward current transfer ratio h fe collector current i c (a) v ce =4v 25?c ?5?c t c =100?c 0.1 1 10 100 1 10 10 2 10 3 10 4 collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) i e =0 f=1mhz t c =25?c 0.01 1 0.1 1 10 100 10 100 1 000 collector current i c (a) collector-emitter voltage v ce (v) non repetitive pulse t c =25?c i cp i c t=10ms dc t=1ms 2sd1275 2sd1275a 1 10 ? 2 10 ? 1 10 10 3 10 2 10 3 10 4 10 2 10 1 10 ? 1 10 ? 3 10 ? 2 10 ? 4 time t (s) thermal resistance r th ( c/w) (1) (2) (1)without heat sink (2)with a 100 100 2mm al heat sink this product complies with the rohs directive (eu 2002/95/ec).
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